The BRADLEY DEPARTMENT of ELECTRICAL and COMPUTER ENGINEERING

ECE FACULTY

Mantu K. Hudait

Picture of Mantu K. Hudait

Office:
626 Whittemore

Mailing Address:
302 Whittemore (0111)
Virginia Tech
Blacksburg, VA 24061

(540) 231-6663
(540) 231-3362
mantu@vt.edu


Education:

Ph.D., Indian Institute of Technology, India, 1999
M.S.E.E., Indian Institute of Technology, India, 1992

Teaching Interests:

Solid state electronic materials and devices; semiconductors and thin films; semiconductor device physics, optoelectronics and heterostructures; photovoltaics and thermophotovoltaics; III-V compound semiconductors for energy efficient nanoelectronics.

Research Interests:

Microelectronics; exploring new materials and device structures using MBE and MOCVD for energy efficient nanoelectronics, high mobility III-V semiconductor heterostructures, strain and bandgap engineering for enhancing hole and electron mobility in low bandgap III-V and Ge quantum well structures, epitaxial growth kinetics, mismatch epitaxy, dislocation and defects confinement into nanoscale for mismatched materials, impact of dislocations on material and device properties, nanowires, thermophotovoltaic and photovoltaic cells on Si substrate for alternate energy sources, novel fabrication techniques and novel device concepts for future nanoelectronic devices.

Selected Publications:
  • Title: Strain relaxation properties of InAsP metamorphic materials grown on InP substrates
    Author(s): M. K. Hudait, Y. Lin, and S. A. Ringel
    Journal: Journal of Applied Physics 105, 061643-1-12, 2009
  • Title: Effect of window layer on In0.69Ga0.31As thermophotovoltaic devices grown on InAsyP1-y step-graded buffers by molecular beam epitaxy
    Author(s): M. K. Hudait, M. Brenner, and S. A. Ringel
    Journal: Solid State Electronics 53, 102-106, 2009
  • Title: Carrier transport in high mobility III-V quantum-well transistors and performance impact for high-speed, low power logic applications
    Author(s): G. Dewey, M. K. Hudait, K. Lee, R. Pillarisetty, W. Rachmady, M. Radosavljevic, R. Rakshit, and R. Chau
    Journal: IEEE Electron Device Letters, Vol. 29, 1094-1097, October, 2008
  • Title: Heterogeneous integration of enhancement mode In0.7Ga0.3As quantum well transistor on silicon substrate using thin (< 2um) composite buffer architecture for high-speed and low-voltage ( 0.5V) logic applications
    Author(s): M. K. Hudait et al
    Conference: International Electron Devices Meeting (IEDM) Technical Digest, pp. 625-628 2007
  • Title: Ultra high-speed, 0.5V supply voltage In0.7Ga0.3As quantum-well transistors on silicon substrate
    Author(s): S. Datta, G. Dewey, J. M. Fastenau, M. K. Hudait et al
    Journal: IEEE Electron Device Letters, Vol. 28 (8), 685-687 , August, 2007
  • Title: Carrier compensation and scattering mechanisms in Si-doped InAsyP1-y layers grown on InP substrates using intermediate InAsyP1-y step-graded buffers
    Author(s): M. K. Hudait, Y. Lin, P. M. Sinha, J. R. Lindemuth, and S.A. Ringel
    Journal: Journal of Applied Physics 100 (6), 063705-1-9, 2006
  • Title: Comparison of mixed anion, InAsyP1-y and mixed cation, InxAl1-xAs metamorphic buffers grown by molecular beam epitaxy on (100) InP substrates
    Author(s): M. K. Hudait, Y. Lin, M. N. Palmisiano, C. Tivarus and J. P. Pelz, and S. A. Ringel
    Journal: Journal of Applied Physics 95 (8), 3952-3960, 2004
  • Title: 0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices grown on InAsyP1-y step-graded buffers by molecular beam epitaxy
    Author(s): M. K. Hudait, Y. Lin, M. N. Palmisiano, and S. A. Ringel
    Journal: IEEE Electron Device Letters 24(9), 538-540, September, 2003
  • Title: High-performance In0.53Ga0.47As thermophotovoltaic devices grown by solid source molecular beam epitaxy
    Author(s): M. K. Hudait, C. L. Andre, O. Kwon, M. N. Palmisiano, and S. A. Ringel
    Journal: IEEE Electron Device Letters 23 (12), 697-699 , December, 2002
  • Title: Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon
    Author(s): L. Gao, R. L. Woo, B. Liang, M. Pozuelo, S. Prikhodko, M. Jackson, N. Goel, M. K. Hudait, D. L. Huffaker, S. Kodambaka, M. S. Goorsky, and R. F. Hicks
    Journal: Nano Letters 9 (6), 2223-2228, 2009