ECE: Electrical & Computer Engineering
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Mixed As/Sb and Tensile Strained Ge/InGaAs Heterostructures for Low-Power Tunnel Field Effect Transistors

1:30 PM - 3:30 PM on Tuesday, April 8, 2014
Location: 460 Durham Hall

Ph.D. Dissertation Defense for Yan Zhu

Graduate Advisory Committee:

Hudait, Mantu K, Chair
Agah, Masoud
Lester, Luke F
Manteghi, Majid
Tao, Chenggang


Power dissipation is a fundamental problem for emerging nanoelectronic devices. The fundamental lower limit of subthreshold slope in the metal-oxide-semiconductor field-effect-transistors (MOSFETs) is a major obstacle to further scale the power dissipation without degrading the device performances. Tunnel field-effect-transistors (tunnel FETs) benefit from steep switching characteristics due to the gate-controlled band-to-band-tunneling transport mechanism, enabling tunnel FET to be a promising candidate for low power logic applications. My research focuses on enhancing the performance of tunnel FETs by utilizing mixed Arsenide/Antimonide (As/Sb) based staggered gap heterostructures. In this presentation, I will discuss the key design considerations and experimental findings in relation to epitaxial growth, heterointerface engineering and impact of dislocations on the transistor performance. I will also present a comprehensive reliability study on the high-temperature operation of mixed As/Sb tunnel FETs, including both the structural properties and device performances. Finally, I will briefly present my recent research findings on tensile strained Ge/InGaAs tunnel FET structure as an alternative path to improve the transistor performance.