Using nanoscale metal pastes, CPES researchers are developing an environmentally friendly die-attach technology that could allow wide band gap power semiconductor devices to function at high temperatures.
The use of wide-band gap devices, such as SiC or GaN diodes and transistors, offers superior switching characteristics and the ability to function at temperatures up to 350° C, which would reduce heat sink and cooling requirements in electronic equipment.
Current attachment methods have too low of a melting point and/or pose environmental risks. CPES efforts are based on synthesis and processing of nanoscale metal pastes that can be sintered at low temperatures to reliably join semiconductor devices with packaging materials. Successful development would improve the performance, reliability, and cost-effectiveness of power electronics systems.