Description of the performance characteristics and limitations of basic semiconductor electronic devices in terms of the properties of semiconductor materials and device structure.
Graduate students in this field require a knowledge of the performance characteristics and limitations of basic semiconductor electronics devices to model these devices and to design electronic systems using these devices. The syllabus change adds new material on crystal growth with some compression of material on the device physics.
Prerequisites: Graduate standing
Knowledge of basic electronics and semiconductor physics, and possession of good background in Mathematics (Differential Equations, boundary value problems) and computing (for device modeling).
Percentage of Course
|Physics and Properties of Semiconductors||15%|
|PN Junction Diode||15%|
|Bipolar Junction Transistor (BJT)||15%|
|Metal - Semiconductor Contacts||15%|
|Junction Field Effect Transistor (JFET) and Metal Semiconductors||15%|
|Metal Oxide Semiconductor Field Effect Transistor (MOSFET)||15%|
|Crystal Growth - Epitaxial Growth Diffusion-Oxidation||10%|